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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | HEXFET® |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 4.6 mOhm @ 21A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 21A |
| Vgs(th) (Max) @ Id | 2.4V @ 100µA |
| Gate Charge (Qg) @ Vgs | 58nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 5250pF @ 15V |
| Power - Max | 3.1W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-PowerVDFN |
| Корпус | PQFN (5x6) |