|
|
Версия для печати
| Current - Continuous Drain (Id) @ 25° C | 9.1A, 11A |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) @ Id, Vgs | 16.4 mOhm @ 9.1A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | 2 N-Channel (Dual) |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Gate Charge (Qg) @ Vgs | 10nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 850pF @ 15V |
| Power - Max | 2W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SO |
|
IRF7907PBF Hexfetr Power Mosfet
Производитель:
|
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| ADP1829ACPZ-R7 | ANALOG DEVICES |
|
|
|||||
| ADP1829ACPZ-R7 |
|
380.00 | ||||||
| ADP1829ACPZ-R7 | Analog Devices Inc |
|
|
|||||
| ADP1829ACPZ-R7 | 4-7 НЕДЕЛЬ | 680 |
|