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MOSFET N-CH 20V 26A PQFN |
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | HEXFET® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 2.5 mOhm @ 20A, 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 26A |
| Vgs(th) (Max) @ Id | 1.1V @ 50µA |
| Gate Charge (Qg) @ Vgs | 78nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 3620pF @ 10V |
| Power - Max | 2.7W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-VQFN Exposed Pad |
| Корпус | PQFN (3x3) |
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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IRLR2905 |
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N-канальный Полевой транзистор (Vds=55V, Id=42A@T=25C, Id=30A@T=70C, Rds0.027 Ohm, ... | INTERNATIONAL RECTIFIER | 80 | 58.59 | |
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IRLR2905 |
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N-канальный Полевой транзистор (Vds=55V, Id=42A@T=25C, Id=30A@T=70C, Rds0.027 Ohm, ... | 1 920 | 18.21 | ||
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IRLR2905 |
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N-канальный Полевой транзистор (Vds=55V, Id=42A@T=25C, Id=30A@T=70C, Rds0.027 Ohm, ... | МЕКСИКА |
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IRLR2905 |
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N-канальный Полевой транзистор (Vds=55V, Id=42A@T=25C, Id=30A@T=70C, Rds0.027 Ohm, ... | INFINEON |
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OPA335AIDBVR |
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Texas Instruments |
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OPA335AIDBVR |
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TEXAS INSTRUMENTS |
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OPA335AIDBVR |
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OPA335AIDBVR |
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TEXAS |
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OPA335AIDBVR |
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4-7 НЕДЕЛЬ | 646 |
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| RC1206FR-07750RL | YAGEO | 48 225 |
0.66 >500 шт. 0.22 |
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| RC1206FR-07750RL | YAGEO | 3 200 |
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| RC1206FR-07750RL |
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| RC1206JR-0733KL | YAGEO | 683 315 |
0.80 >1000 шт. 0.16 |
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| RC1206JR-0733KL | YAGEO | 5 713 |
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| RC1206JR-0733KL |
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| RC1206JR-0743KL | YAGEO | 91 664 |
0.85 >1000 шт. 0.17 |
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| RC1206JR-0743KL | YAGEO |
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| RC1206JR-0743KL |
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