MBRM120ET1G
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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Voltage - Forward (Vf) (Max) @ If | 530mV @ 1A |
| Voltage - DC Reverse (Vr) (Max) | 20V |
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 10µA @ 20V |
| Diode Type | Schottky |
| Скорость | Fast Recovery =< 500ns, > 200mA (Io) |
| Тип монтажа | Поверхностный |
| Корпус (размер) | Powermite® |
| Корпус | Powermite |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
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|---|---|---|---|---|---|---|---|---|
| ADV7179KCPZ-REEL | ANALOG DEVICES |
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| ADV7179KCPZ-REEL | ANALOG DEVICES |
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| ADV7179KCPZ-REEL | Analog Devices Inc |
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| DP-25C-G | BM | 70 | 57.80 | |||||
| DP-25C-G |
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34.00 | ||||||
| DP-25C-G | BB |
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| LMH0024MAXNOPB | NATIONAL SEMICONDUCTOR |
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| LMH0024MAXNOPB | NATIONAL SEMICONDUCTOR | 4 |
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| MBRM140T1G | ON SEMICONDUCTOR |
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| MBRM140T1G | ON SEMICONDUCTOR | 4 988 |
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| MBRM140T1G |
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| MBRM140T1G | ONS |
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MMBD914LT1 | LESHAN RADIO COMPANY |
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MMBD914LT1 | MOTOROLA |
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MMBD914LT1 | INFINEON |
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MMBD914LT1 | ON SEMICONDUCTOR |
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MMBD914LT1 | INFINEON | 35 |
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MMBD914LT1 | LESHAN RADIO COMPANY, LTD | 96 |
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MMBD914LT1 | MOTOROLA | 20 |
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MMBD914LT1 | ON SEMICONDUCTOR | 1 238 |
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MMBD914LT1 | Infineon Technologies |
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