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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | TrenchMOS™ |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 4.1 mOhm @ 25A, 10V |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 94.5A |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Gate Charge (Qg) @ Vgs | 67nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 3660pF @ 10V |
| Power - Max | 62.5W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | SC-100, SOT-669 |
| Корпус | LFPAK |
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PH4840S (MOSFET) N-channel TrenchMOS intermediate level FET
Производитель:
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