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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAI/QTC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAIR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ON SEMICONDUCTOR
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800
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11.34
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MOTOROLA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NATIONAL SEMICONDUCTOR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NXP
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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PHILIPS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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TOSHIBA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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DC COMPONENTS
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10 280
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4.72
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FSC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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UTC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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DIOTEC
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5 898
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8.42
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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МИНСК
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAIRCHILD
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MOTOROLA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ON SEMICONDUCTOR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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OTHER
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KEC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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5 600
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1.22
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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TOSHIBA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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---
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NO TRADEMARK
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MULTICOMP
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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HOTTECH
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434
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1.75
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KLS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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КИТАЙ
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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CHINA
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9 600
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1.22
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ZH
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IRFP240 |
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Мощный N канальный MOSFET транзистор 200V, 20A, 150W
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INTERNATIONAL RECTIFIER
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IRFP240 |
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Мощный N канальный MOSFET транзистор 200V, 20A, 150W
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VISHAY
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IRFP240 |
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Мощный N канальный MOSFET транзистор 200V, 20A, 150W
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FAIR
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IRFP240 |
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Мощный N канальный MOSFET транзистор 200V, 20A, 150W
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HARRIS
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IRFP240 |
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Мощный N канальный MOSFET транзистор 200V, 20A, 150W
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INTERSIL
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IRFP240 |
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Мощный N канальный MOSFET транзистор 200V, 20A, 150W
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FAIRCHILD
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IRFP240 |
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Мощный N канальный MOSFET транзистор 200V, 20A, 150W
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FAIRCHILD
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IRFP240 |
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Мощный N канальный MOSFET транзистор 200V, 20A, 150W
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HARRIS
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IRFP240 |
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Мощный N канальный MOSFET транзистор 200V, 20A, 150W
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INTERSIL
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IRFP240 |
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Мощный N канальный MOSFET транзистор 200V, 20A, 150W
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Vishay/Siliconix
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IRFP240 |
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Мощный N канальный MOSFET транзистор 200V, 20A, 150W
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КИТАЙ
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IRFP240 |
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Мощный N канальный MOSFET транзистор 200V, 20A, 150W
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ISIL
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IRFP240 |
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Мощный N канальный MOSFET транзистор 200V, 20A, 150W
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SILICONIX
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19
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IRFP240 |
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Мощный N канальный MOSFET транзистор 200V, 20A, 150W
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155.76
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IRFP240 |
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Мощный N канальный MOSFET транзистор 200V, 20A, 150W
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1
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SPW35N60C3 |
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INFINEON
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SPW35N60C3 |
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960.00
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SPW35N60C3 |
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Infineon Technologies
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SPW35N60C3 |
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КИТАЙ
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SQP 5W 0.33 5% |
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SQP 5W 0.33 5% |
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YAGEO
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SQP 5W 0.33 5% |
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КИТАЙ
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SQP 5W 0.33 5% |
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ТАЙВАНЬ(КИТАЙ)
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VS-80EPF06 |
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VISHAY
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