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Версия для печати
| Gate Charge (Qg) @ Vgs | 2.5nC @ 4.5V |
| Vgs(th) (Max) @ Id | 2.5V @ 25µA |
| Current - Continuous Drain (Id) @ 25° C | 2.7A |
| Drain to Source Voltage (Vdss) | 60V |
| Rds On (Max) @ Id, Vgs | 92 mOhm @ 2.7A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) @ Vds | 290pF @ 25V |
| Power - Max | 1.25W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | Micro3™/SOT-23 |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| 293D476X96R3B2TE3 | VISHAY | 208 | 12.60 | |||||
| 293D476X96R3B2TE3 | Vishay/Sprague |
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| 293D476X96R3B2TE3 | VISHAY |
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| 293D476X96R3B2TE3 |
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| ISO7221MD | TEXAS INSTRUMENTS |
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| ISO7221MD |
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1 185.20 | ||||||
| ISO7221MD | TEXAS |
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| ISO7221MD | 4-7 НЕДЕЛЬ | 412 |
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| K4S561632N-LI75T00 | SAM |
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| K4S561632N-LI75T00 |
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| K4S561632N-LI75T00 | 4-7 НЕДЕЛЬ | 528 |
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| SLF6045T-100M1R6-3PF | TDK |
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| SLF6045T-100M1R6-3PF |
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| К73-17 250 В 0.22 МКФ(200Г) |
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