|
|
Версия для печати
| Gate Charge (Qg) @ Vgs | 2.5nC @ 4.5V |
| Vgs(th) (Max) @ Id | 2.5V @ 25µA |
| Current - Continuous Drain (Id) @ 25° C | 2.7A |
| Drain to Source Voltage (Vdss) | 60V |
| Rds On (Max) @ Id, Vgs | 92 mOhm @ 2.7A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) @ Vds | 290pF @ 25V |
| Power - Max | 1.25W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | Micro3™/SOT-23 |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| 293D476X96R3B2TE3 | VISHAY | 208 | 12.56 | |||||
| 293D476X96R3B2TE3 | Vishay/Sprague |
|
|
|||||
| 293D476X96R3B2TE3 | VISHAY |
|
|
|||||
| 293D476X96R3B2TE3 |
|
|
||||||
| ADA4896-2ARMZ |
|
|
||||||
| ADA4896-2ARMZ | ANALOG DEVICES |
|
|
|||||
| ADA4896-2ARMZ | ANALOG |
|
|
|||||
| ADA4896-2ARMZ | 4-7 НЕДЕЛЬ | 685 |
|
|||||
| FH-311 |
|
|
||||||
| FH-311 | DRAGON CITY |
|
|
|||||
| FH-311 | TWN |
|
|
|||||
| RC0402JR-07200RL |
|
RES 200 OHM 1/16W 5% 0402 ( ±100ppm/°C) | YAGEO | 2 142 564 |
0.40 >1000 шт. 0.08 |
|||
| RC0402JR-07200RL |
|
RES 200 OHM 1/16W 5% 0402 ( ±100ppm/°C) | YAGEO | 30 768 |
|
|||
| RC0402JR-07200RL |
|
RES 200 OHM 1/16W 5% 0402 ( ±100ppm/°C) |
|
|
||||
| SLF12565T-470M2R4-PF | TDK |
|
|
|||||
| SLF12565T-470M2R4-PF | КИТАЙ |
|
|
|||||
| SLF12565T-470M2R4-PF |
|
|