|
|
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | QFET™ |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 480 mOhm @ 6.5A, 10V |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 13A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 56nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 2055pF @ 25V |
| Power - Max | 195W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220 |
| Product Change Notification | Passivation Material Change 14/May/2008 |
|
FQP13N50C (MOSFET) 500V N-Channel MOSFET
Производитель:
|
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| 2200МКФ 16В 105° CD263 (10Х20) КОНДЕНСАТОР ELZET |
|
|
||||||
| BAV70LT1G | ON SEMICONDUCTOR |
|
|
|||||
| BAV70LT1G | ONS | 604 | 5.17 | |||||
| BAV70LT1G | ON SEMICONDUCTOR | 1 498 |
|
|||||
| BAV70LT1G | 911 | 3.70 | ||||||
| BAV70LT1G | ON SEMICONDUCTO |
|
|
|||||
| BAV70LT1G | ONSEMICONDUCTOR |
|
|
|||||
| BAV70LT1G | LRC |
|
|
|||||
| MICRO USB-B | КИТАЙ |
|
|
|||||
| MICROUSB M USB-A M 1.8M F |
|
|
||||||
|
|
|
STF11NM80 |
|
N-channel 800 v - 0.35 ? - 11 a - to-220fp mdmesh™ power mosfet | ST MICROELECTRONICS |
|
|
|
|
|
|
STF11NM80 |
|
N-channel 800 v - 0.35 ? - 11 a - to-220fp mdmesh™ power mosfet |
|
328.80 | ||
|
|
|
STF11NM80 |
|
N-channel 800 v - 0.35 ? - 11 a - to-220fp mdmesh™ power mosfet | STMicroelectronics |
|
|
|
|
|
|
STF11NM80 |
|
N-channel 800 v - 0.35 ? - 11 a - to-220fp mdmesh™ power mosfet | КИТАЙ |
|
|
|
|
|
|
STF11NM80 |
|
N-channel 800 v - 0.35 ? - 11 a - to-220fp mdmesh™ power mosfet | ST MICROELECTRONICS SEMI | 13 332 |
|
|
|
|
|
STF11NM80 |
|
N-channel 800 v - 0.35 ? - 11 a - to-220fp mdmesh™ power mosfet | STMICROELECTR |
|
|