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Версия для печати
| Power - Max | 110W |
| Input Capacitance (Ciss) @ Vds | 1700pF @ 25V |
| Gate Charge (Qg) @ Vgs | 48nC @ 5V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Current - Continuous Drain (Id) @ 25° C | 42A |
| Drain to Source Voltage (Vdss) | 55V |
| Rds On (Max) @ Id, Vgs | 27 mOhm @ 25A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | D-Pak |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| 1206-8.2 5% |
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ЧИП — резистор | 321 |
0.96 >500 шт. 0.32 |
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| 1206-9.1K 5% |
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ЧИП — резистор | 176 |
0.96 >500 шт. 0.32 |
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FDD6530A |
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20v n-channel powertrench mosfet | FAIR |
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FDD6530A |
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20v n-channel powertrench mosfet | FAIRCHILD |
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FDD6530A |
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20v n-channel powertrench mosfet |
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192.00 | ||
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FDD6530A |
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20v n-channel powertrench mosfet | FAIRCHILD | 1 336 |
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FDD6530A |
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20v n-channel powertrench mosfet | Fairchild Semiconductor |
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FDD6530A |
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20v n-channel powertrench mosfet | ONS |
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L-3VEGW |
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KINGBRIGHT |
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L-3VEGW |
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KGB | 11 732 | 14.37 | ||
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L-3VEGW |
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21.24 | |||
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L-3VEGW |
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KB |
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L-3VEGW |
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КИТАЙ |
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| SDR0604-221KL (220 МКГН) | BOURNS |
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