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DIODE BRIDGE 0.5A 600V MBS |
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Voltage - Peak Reverse (Max) | 600V |
| Current - DC Forward (If) | 500mA |
| Diode Type | Single Phase |
| Скорость | Standard Recovery >500ns, > 200mA (Io) |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-269AA |
| Корпус | MBS |
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| C503B-GAN-CB0F0791 | CREE |
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| C503B-GAN-CB0F0791 |
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19.44 | ||||||
| C503B-GAN-CB0F0791 | Cree Inc |
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| C503B-GAN-CB0F0791 | CREEINC |
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| C503B-GAN-CB0F0791 | CREE-LED |
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| C503B-RBN-CW0Z0AA1 | CREE |
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| C503B-RBN-CW0Z0AA1 | Cree Inc |
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| C503B-RBN-CW0Z0AA1 |
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IRFP360 |
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Транзистор полевой N-MOS 400V, 23A, 280W | INTERNATIONAL RECTIFIER |
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IRFP360 |
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Транзистор полевой N-MOS 400V, 23A, 280W | VISHAY |
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IRFP360 |
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Транзистор полевой N-MOS 400V, 23A, 280W | 16 | 351.50 | ||
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IRFP360 |
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Транзистор полевой N-MOS 400V, 23A, 280W | Vishay/Siliconix |
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IRFP360 |
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Транзистор полевой N-MOS 400V, 23A, 280W | КИТАЙ |
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| M95128-WMN6TP | ST MICROELECTRONICS |
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| M95128-WMN6TP |
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360.00 | ||||||
| M95128-WMN6TP | ST MICROELECTRONICS SEMI |
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| M95128-WMN6TP | STMicroelectronics |
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| M95128-WMN6TP | 4-7 НЕДЕЛЬ | 60 |
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| M95256-RMN6P | ST MICROELECTRONICS |
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| M95256-RMN6P | STMicroelectronics |
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| M95256-RMN6P | КИТАЙ |
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| M95256-RMN6P |
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| M95256-RMN6P | 4-7 НЕДЕЛЬ | 702 |
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