| Gate Charge (Qg) @ Vgs | 20nC @ 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Current - Continuous Drain (Id) @ 25° C | 10A |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) @ Id, Vgs | 50 mOhm @ 6A, 4.5V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) @ Vds | 1200pF @ 16V |
| Power - Max | 8.3W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-261-4, TO-261AA |
| Корпус | SOT-223 |
| Product Change Notification | Specification Change MSL Updated 2/April/2007 |
Версия для печати
