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Версия для печати
| Drain to Source Voltage (Vdss) | 55V |
| Rds On (Max) @ Id, Vgs | 650 mOhm @ 270mA, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | OptiMOS™ |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Current - Continuous Drain (Id) @ 25° C | 540mA |
| Vgs(th) (Max) @ Id | 2V @ 2.7µA |
| Gate Charge (Qg) @ Vgs | 2.26nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 75pF @ 25V |
| Power - Max | 360mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | PG-SOT23-3 |