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FET Type | MOSFET N-Channel, Metal Oxide |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 800 mOhm @ 3.1A, 10V |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 5.2A |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 14nC @ 10V |
Input Capacitance (Ciss) @ Vds | 260pF @ 25V |
Power - Max | 3W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
Корпус | D2PAK |
IRF620S (MOSFET) HEXFET® Power MOSFET
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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2П302А | 323 | 258.30 | |||||
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2П302А | ВИННИЦА |
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2П302А | ПУЛЬСАР |
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2П302А | RUS |
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2П302А | ЭКСПОРТ |
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MBR350TR | INTERNATIONAL RECTIFIER |
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MBR350TR | INTERNATIONAL RECTIFIER |
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MBR350TR | Vishay/Semiconductors |
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MF-100-1-2.4КJ | HITANO |
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MF-100-1-2.4КJ | FAITHFUL LINK |
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MF-100-1-51J | HITANO |
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MF-100-1-51J | FAITHFUL LINK |
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RY-12W-K-LF | TAK |
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RY-12W-K-LF |
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Корзина
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