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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | HEXFET® |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 20 mOhm @ 38A, 10V |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 74A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 180nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 3400pF @ 25V |
| Power - Max | 200W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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AD5660BRJZ-3REEL7 |
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Analog Devices Inc |
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| AM26LV31EIPWR |
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| AM26LV31EIPWR | Texas Instruments |
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| AM26LV31EIPWR | TEXAS |
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| AM26LV31EIPWR | 4-7 НЕДЕЛЬ |
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CRHV1206AF20M0FKE5 |
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Vishay/Dale |
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CRHV1206AF51M0FKE5 |
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Vishay/Dale |
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CRHV1206AF51M0FKE5 |
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LM19CIZ | NATIONAL SEMICONDUCTOR |
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LM19CIZ | NSC |
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LM19CIZ |
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46.84 | |||||
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LM19CIZ | NATIONAL SEMICONDUCTOR |
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LM19CIZ | СОЕДИНЕННЫЕ ШТА |
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LM19CIZ | TEXAS INSTRUMENTS |
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LM19CIZ | TEXAS |
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LM19CIZ | 4-7 НЕДЕЛЬ |
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