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Версия для печати
                        
                        
                    
                                | Power - Max | 660mW | 
| Input Capacitance (Ciss) @ Vds | 2363pF @ 12V | 
| Gate Charge (Qg) @ Vgs | 18nC @ 4.5V | 
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | 
| Current - Continuous Drain (Id) @ 25° C | 8.3A | 
| Drain to Source Voltage (Vdss) | 30V | 
| Rds On (Max) @ Id, Vgs | 5 mOhm @ 20A, 10V | 
| FET Feature | Logic Level Gate | 
| FET Type | MOSFET N-Channel, Metal Oxide | 
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | 
| Тип монтажа | Поверхностный | 
| Корпус (размер) | 8-WDFN Exposed Pad | 
| Корпус | 8-WDFN |