| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Product Change Notification | LTB Notification 08/Jan/2008 |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 35 mOhm @ 5.3A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 7A |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) @ Vgs | 75.8nC @ 6V |
| Input Capacitance (Ciss) @ Vds | 1680pF @ 24V |
| Power - Max | 2.5W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SOICN |
Версия для печати
