| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Product Change Notification | Discontinuance 11/Feb/2009 |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 90 mOhm @ 3A, 10V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 3.8A |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) @ Vgs | 18nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 630pF @ 16V |
| Power - Max | 2W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SOICN |
Версия для печати
