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MOSFET N-CH 200V 21A TO-263 |
Версия для печати
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Серия | SIPMOS® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 130 mOhm @ 13.5A, 10V |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 21A |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Input Capacitance (Ciss) @ Vds | 1900pF @ 25V |
| Power - Max | 125W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
| Корпус | PG-TO263-3 |
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