| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Product Change Notification | Discontinuance 11/Feb/2009 |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 800 mOhm @ 200mA, 10V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 400mA |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 2.18nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 70pF @ 5V |
| Power - Max | 225mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23-3 |
Версия для печати
