| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Product Change Notification | Specification Change MSL Updated 2/April/2007 |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 300 mOhm @ 600mA, 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 1.2A |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Gate Charge (Qg) @ Vgs | 18nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 460pF @ 20V |
| Power - Max | 800mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-261-4, TO-261AA |
| Корпус | SOT-223 |
Версия для печати
