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MOSFET N-CH 55V 120A D2PAK7 |
Версия для печати
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Серия | HEXFET® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 4.9 mOhm @ 88A, 10V |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 120A |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Gate Charge (Qg) @ Vgs | 230nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 5360pF @ 25V |
| Power - Max | 230W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-263-7, D²Pak (6 leads + Tab), TO-263CB |
| Корпус | D2PAK (7-Lead) |
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