| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Product Change Notification | Encapsulate Change 15/May/2008 End Of Life/Mfg Name Change 14/May/200 |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 3 Ohm @ 200mA, 2.7V |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25° C | 280mA |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Input Capacitance (Ciss) @ Vds | 50pF @ 25V |
| Power - Max | 350mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23-3 |
Версия для печати
