|
MOSFET N-CH 20V 39A TO-262 |
Версия для печати
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Серия | HEXFET® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 20 mOhm @ 23A, 7V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 39A |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Gate Charge (Qg) @ Vgs | 31nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 1300pF @ 15V |
| Power - Max | 57W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Корпус | TO-262-3 |
|