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Корпус | D2PAK |
Current - Continuous Drain (Id) @ 25° C | 10A |
Drain to Source Voltage (Vdss) | 400V |
Rds On (Max) @ Id, Vgs | 550 mOhm @ 6A, 10V |
FET Feature | Standard |
FET Type | MOSFET N-Channel, Metal Oxide |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
Тип монтажа | Поверхностный |
Power - Max | 3.1W |
Input Capacitance (Ciss) @ Vds | 1030pF @ 25V |
Gate Charge (Qg) @ Vgs | 36nC @ 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
IRF740AS (Дискретные сигналы) 400V Single N-channel HexFET Power MOSFET inA D2-Pak Package Также в этом файле: IRF740ASTRR
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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CI160808-18NJ | BOURNS | 30 | 6.20 | |||||
CI160808-18NJ |
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CI160808-1N8D | BOURNS | 28 | 16.94 | |||||
CI160808-1N8D |
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LQW18AN27NG00D | MURATA | 3 400 | 13.14 | |||||
LQW18AN27NG00D | MUR | 152 496 | 1.33 | |||||
LQW18AN27NG00D |
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LQW18AN27NG00D | MURATA |
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LQW18AN2N2D00D |
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Murata Electronics North America |
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LQW18AN2N2D00D |
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MUR | 14 177 | 2.21 | ||
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LQW18AN2N2D00D |
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LQW18AN2N2D00D |
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MURATA | 2 840 | 8.20 | ||
LQW18AN6N2C00D | MURATA | 2 000 | 9.29 | |||||
LQW18AN6N2C00D | MUR | 3 431 | 3.70 | |||||
LQW18AN6N2C00D |
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Корзина
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