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Версия для печати
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | UltraFET™ |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 92 mOhm @ 13A, 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 12A |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 11.3nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 350pF @ 25V |
| Power - Max | 38W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-251-3 Short Leads, IPak, TO-251AA |
| Корпус | I-Pak |
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HUF76407D3 (MOSFET) N-Channel, Logic Level UltraFET Power MOSFET
Производитель:
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