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Версия для печати
| Input Capacitance (Ciss) @ Vds | 350pF @ 10V |
| Gate Charge (Qg) @ Vgs | 10nC @ 4.5V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Current - Continuous Drain (Id) @ 25° C | 2.3A |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) @ Id, Vgs | 140 mOhm @ 2.7A, 4.5V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Серия | FETKY™ |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Power - Max | 1.14W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 6-VFDFN Exposed Pad |
| Корпус | 6-DFN |