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T4 20/8 PCH 2X2 UDFN SING |
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 29 mOhm @ 6.4A, 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 4A |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) @ Vgs | 29nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 2600pF @ 15V |
| Power - Max | 700mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 6-UDFN Exposed Pad |
| Корпус | 6-UDFN |
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