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Версия для печати
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | STripFET™ DeepGATE™ |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 8.5A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 17A |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) @ Vgs | 17nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 1690pF @ 25V |
| Power - Max | 2W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | PowerFlat™ |
| Корпус | PowerFlat™ (3.3x3.3) |
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STL17N3LLH6 (MOSFET) N-channel 30 V, 0.0024 ?, 17 A PowerFLAT™ (6x5) STripFET™ VI DeepGATE™ Power MOSFET
Производитель:
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