FQP6N80C
800v n-channel mosfet
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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | QFET™ |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 2.75A, 10V |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 5.5A |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 30nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1310pF @ 25V |
| Power - Max | 158W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220 |
| Product Change Notification | Design/Process Change Notification 26/June/2007 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
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FQP6N80C (MOSFET) 800V N-Channel MOSFET
Производитель:
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С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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| FAN7529M | FAIR |
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| FAN7529M | FAIRCHILD |
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| FAN7529M | FAIRCHILD |
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| FAN7529M | Fairchild Semiconductor |
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| FAN7529M |
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| FAN7529M | FSC1 |
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| FAN7529M |
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| FAN7529M | FSC |
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| FAN7529M | ONS |
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| FAN7529M | 4-7 НЕДЕЛЬ | 430 |
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| FSQ510 | FSC |
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| FSQ510 | FAIR |
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| FSQ510 | FAIRCHILD |
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| FSQ510 | FAIRCHILD |
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| FSQ510 | Fairchild Semiconductor |
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| FSQ510 | США |
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| FSQ510 | СОЕДИНЕННЫЕ ШТА |
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| FSQ510 |
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| FSQ510 | FSC1 |
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| FSQ510 | ONS |
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| FSQ510 | ONS-FAIR |
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| FSQ510 | ONSEMICONDUCTOR |
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| FSQ510 | 4-7 НЕДЕЛЬ | 255 |
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ICE3BR1765J |
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Infineon Technologies |
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ICE3BR1765J |
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INFINEON |
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ICE3BR1765J |
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ICE3BR1765J |
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ICE3BR1765J |
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4-7 НЕДЕЛЬ | 729 |
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| NCP1607BDR2G | ON SEMICONDUCTOR |
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| NCP1607BDR2G | ONS |
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| NCP1607BDR2G | 1 | 166.32 | ||||||
| NCP1607BDR2G | 1 |
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| UCC2800D | 1 | 138.75 | ||||||
| UCC2800D | TEXAS INSTRUMENTS |
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| UCC2800D | TEXAS |
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| UCC2800D | 4-7 НЕДЕЛЬ | 439 |
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