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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | QFET™ |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 2 Ohm @ 2.75A, 10V |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 5.5A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 20nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 810pF @ 25V |
| Power - Max | 125W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220 |
| Product Change Notification | Design/Process Change Notification 26/June/2007 |
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FQP6N60C (MOSFET) 600V N-Channel MOSFET
Производитель:
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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| 2W10M (2A,1000В) WOM (RC-2) ДИОДНЫЙ МОСТ HOTTECH |
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| QRZ 20.000000 МГЦ |
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| THERM.FUSE TZD-157°(10A) | CHINA |
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| THERM.FUSE TZD-157°(15A) | CHINA |
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| UC3842ANZ | ON SEMIC |
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| UC3842ANZ |
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| UC3842ANZ | 4-7 НЕДЕЛЬ | 196 |
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