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Версия для печати
| Current - Continuous Drain (Id) @ 25° C | 200mA |
| Drain to Source Voltage (Vdss) | 60V |
| Rds On (Max) @ Id, Vgs | 5 Ohm @ 500mA, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Корпус (размер) | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Тип монтажа | Выводной |
| Power - Max | 400mW |
| Input Capacitance (Ciss) @ Vds | 30pF @ 25V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Корпус | TO-92-3 |
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2N7000TA (MOSFET) Advanced Small Signal MOSFET
Производитель:
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