| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| RoHS Information | Lead Free/RoHS Statement |
| Серия | eGaN™ |
| FET Type | GaNFET N-Channel, Gallium Nitride |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 7 mOhm @ 25A, 5V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 25A |
| Vgs(th) (Max) @ Id | 2.5V @ 5mA |
| Gate Charge (Qg) @ Vgs | 10.5nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 800pF @ 50V |
| Тип монтажа | Поверхностный |
| Корпус (размер) | Die Outline (11-Solder Bar) |
| Корпус | Die Outline (11-Solder Bar) |
Версия для печати
