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MOSFET P-CH 60V 4A ECH8 |
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 85 mOhm @ 2A, 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 4A |
| Gate Charge (Qg) @ Vgs | 34nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1680pF @ 20V |
| Power - Max | 1.6W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-ECH |
| Корпус | 8-ECH |
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