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MOSFET N-CH 60V 0.2A ESCP1008-4 |
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 2.9 Ohm @ 100mA, 4V |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 200mA |
| Gate Charge (Qg) @ Vgs | 1nC @ 4V |
| Input Capacitance (Ciss) @ Vds | 26pF @ 20V |
| Power - Max | 150mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 0403 (1008 Metric) - 4 lead |
| Корпус | 1008 |
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