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MOSFET N-CH 30V 4A TSM |
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 53 mOhm @ 3A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 4A |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) @ Vgs | 4.3nC @ 4V |
| Input Capacitance (Ciss) @ Vds | 270pF @ 10V |
| Power - Max | 700mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TSM |
| Корпус | TSM (2.9x2.8) |
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