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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | SuperMESH™ |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 1.3 Ohm @ 3.6A, 10V |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25° C | 8A |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Gate Charge (Qg) @ Vgs | 72nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 2115pF @ 25V |
| Power - Max | 160W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-247-3 |
| Корпус | TO-247-3 |
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STW9NK90Z (MOSFET) N-channel 900V - 1.1? - 8A - TO-247 Zener-protected superMESHTM MOSFET
Производитель:
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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16K1 F 100K |
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Резистор углеродистый 0,125Вт, 100кОм | 445 | 15.12 | ||
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16K1 F 100K |
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Резистор углеродистый 0,125Вт, 100кОм | RUICHI |
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2W10G-E4/51 |
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Vishay/General Semiconductor |
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2W10G-E4/51 |
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VISHAY |
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2W10G-E4/51 |
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FGL60N100BNTD |
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Fairchild Semiconductor |
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FGL60N100BNTD |
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FAIR |
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FGL60N100BNTD |
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FGL60N100BNTD |
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FAIRCHILD |
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FGL60N100BNTD |
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ONS-FAIR |
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FGL60N100BNTD |
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ONS |
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FGL60N100BNTD |
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FAIRCHILD |
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| STTA806DI | ST MICROELECTRONICS | 26 | 223.02 | |||||
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| STTA806DI | STMicroelectronics |
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| UC3843B |
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| UC3843B | YOUTAI | 4 608 | 21.78 | |||||
| UC3843B | FULIHAO TECH |
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| UC3843B | 4-7 НЕДЕЛЬ | 79 |
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