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MOSFET P-CH 30V 1A TSMT6 |
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Diode (Isolated) |
| Rds On (Max) @ Id, Vgs | 400 mOhm @ 1A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 1A |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) @ Vgs | 1.7nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 90pF @ 10V |
| Power - Max | 900mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TSMT6 |
| Корпус | TSMT6 |
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