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MOSFET P-CH 20V 2.5A 3-DFN |
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 54 mOhm @ 2.5A, 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 2.5A |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) @ Vgs | 9.1nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 214pF @ 10V |
| Power - Max | 530mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 3-XFDFN |
| Корпус | DFN2015H4-3 |
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