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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 10mA, 4V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 200mA |
| Vgs(th) (Max) @ Id | 900mV @ 100µA |
| Input Capacitance (Ciss) @ Vds | 41pF @ 3V |
| Power - Max | 200mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 3-DFN |
| Корпус | 3-DFN1006H4 (1.0x0.6) |