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Версия для печати
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 125 mOhm @ 1A, 10V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 3A, 2.5A |
| Gate Charge (Qg) @ Vgs | 27nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 525pF @ 10V |
| Power - Max | 900mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SOICN |