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MOSFET N+P 60V 6.3A/4.9A 8SOIC |
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 25 mOhm @ 6.3A, 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 6.3A, 4.9A |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 58nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 2300pF @ 30V |
| Power - Max | 2W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SOIC |
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