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MOSFET DUAL N-CHAN 20V SOT-363 |
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Product Change Notification | Copper Bond Wire Change 3/May/2011 |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 550 mOhm @ 540mA, 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 540mA |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Input Capacitance (Ciss) @ Vds | 150pF @ 16V |
| Power - Max | 200mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 6-TSSOP, SC-88, SOT-363 |
| Корпус | SOT-363 |
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