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Версия для печати
| FET Feature | Logic Level Gate |
| FET Type | 2 P-Channel (Dual) |
| Серия | PowerTrench® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 22 mOhm @ 6.9A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 6.9A |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 40nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1360pF @ 15V |
| Power - Max | 900mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SOICN |
| Product Change Notification | Mold Compound Change 12/Dec/2007 Die Revision 05/Dec/2007 |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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| DCF2217L |
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| DCF2217L | ТАЙВАНЬ (КИТАЙ) |
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| DCF2217L | ТАЙВАНЬ(КИТАЙ) |
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| DCF2217L | КИТАЙ |
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TC89101P |
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EEPROM 1K (64x16/128x8) | TOSHIBA | 26 | 143.64 | |
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TC89101P |
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EEPROM 1K (64x16/128x8) | TOS |
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TC89101P |
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EEPROM 1K (64x16/128x8) |
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170.52 | ||
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TC89101P |
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EEPROM 1K (64x16/128x8) | 1 |
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TC89101P |
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EEPROM 1K (64x16/128x8) | 4-7 НЕДЕЛЬ | 442 |
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