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Версия для печати
| Input Capacitance (Ciss) @ Vds | 650pF @ 25V |
| Gate Charge (Qg) @ Vgs | 33nC @ 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Current - Continuous Drain (Id) @ 25° C | 6.5A, 4.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) @ Id, Vgs | 29 mOhm @ 5.8A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | N and P-Channel |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Power - Max | 2W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SO |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
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BCX51-16,115 |
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NXP Semiconductors |
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BCX51-16,115 |
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NXP |
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BCX51-16,115 |
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NEX |
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BCX51-16,115 |
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BCX54,115 |
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NXP Semiconductors |
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BCX54,115 |
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NXP |
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BCX54,115 |
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NEX |
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BCX54,115 |
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| BSP171PL6327 | INFINEON |
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STN3PF06 |
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Транзистор | ST MICROELECTRONICS |
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STN3PF06 |
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Транзистор | ST MICROELECTRONICS SEMI |
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STN3PF06 |
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Транзистор | STMicroelectronics |
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STN3PF06 |
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Транзистор |
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STN3PF06 |
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Транзистор |
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STN3PF06 |
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Транзистор | ST MICROELECTRO |
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| TLC374CDR | TEXAS INSTRUMENTS |
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| TLC374CDR | TEXAS INSTRUMENTS |
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| TLC374CDR |
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| TLC374CDR | 4-7 НЕДЕЛЬ | 740 |
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