|
Версия для печати
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | TrenchFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 6 mOhm @ 20A, 10V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 50A |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 30nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 2550pF @ 10V |
| Power - Max | 65W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | TO-252, (D-Pak) |
|
SUD50N02-06P N-channel 20-v (d-s) 175and#176; Mosfet
Производитель:
|