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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | TrenchFET® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 3.25 mOhm @ 25A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 17A |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 50nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 5600pF @ 15V |
| Power - Max | 1.6W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SOICN |
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SI4336DY N-Channel 30-V (D-S) MOSFET Также в этом файле: Si4336DY-T1
Производитель:
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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| SI4392DY | SILICONIX |
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| SI4392DY | SILICONIX |
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SI4800 | PHILIPS |
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SI4800 | PHILIPS |
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SI4835DY | FAIR |
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SI4835DY | VISHAY |
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SI4835DY | FAIRCHILD |
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SI4835DY |
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170.00 | |||||
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SI4835DY | FAIRCHILD |
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| SN65LVDS1D | TEXAS INSTRUMENTS |
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| SN65LVDS1D |
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300.00 | ||||||
| SN65LVDS1D | TEXAS INSTRUMENTS |
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| SN65LVDS1D | TEXAS |
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| SN65LVDS1D | 4-7 НЕДЕЛЬ | 728 |
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| SN65LVDS2DR | TEXAS INSTRUMENTS |
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| SN65LVDS2DR |
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336.00 | ||||||
| SN65LVDS2DR | TEXAS INSTRUMENTS |
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| SN65LVDS2DR | 4-7 НЕДЕЛЬ | 397 |
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