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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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1N4007 |
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DC COMPONENTS
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58 992
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1.34
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1N4007 |
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GENERAL SEMICONDUCTOR
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1N4007 |
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LITE ON OPTOELECTRONICS
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1N4007 |
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PANJIT
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1N4007 |
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FSC
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1N4007 |
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MCC
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1N4007 |
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DIC
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1N4007 |
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FAIR
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1N4007 |
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PHILIPS
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1N4007 |
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MIC
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334 765
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1.47
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1N4007 |
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DIOTEC
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112 104
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2.86
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1N4007 |
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ON SEMICONDUCTOR
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1N4007 |
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LD
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1N4007 |
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JGD
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1N4007 |
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MING SHUN
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1N4007 |
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MS
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1N4007 |
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QUAN-HONG
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1N4007 |
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XR
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1N4007 |
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GALAXY
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1N4007 |
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COMPACT TECHNOLOGY
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1N4007 |
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DC COMPONENTS
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1N4007 |
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FAIRCHILD
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288
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1N4007 |
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GENERAL SEMICONDUCTOR
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1
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1N4007 |
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LITE ON OPTOELECTRONICS
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1N4007 |
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MASTER INSTRUMENT CORPORATION
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1N4007 |
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MICRO SEMICONDUCTOR(MICROSEMI)
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1N4007 |
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ON SEMICONDUCTOR
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1N4007 |
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PANJIT
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307 692
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1N4007 |
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PHILIPS
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1N4007 |
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TAIWAN SEMICONDUCTOR MANF.
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1N4007 |
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YANGJIE SEMICONDUCT
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1N4007 |
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Fairchild Semiconductor
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1N4007 |
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD
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1N4007 |
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MICROSEMI CORP
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1N4007 |
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ТАЙВАНЬ(КИТАЙ)
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1N4007 |
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GD
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1N4007 |
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JC
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1N4007 |
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KINGTRONICS
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1N4007 |
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YJ
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49 961
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1.21
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1N4007 |
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DIODES INC.
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1N4007 |
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MIG
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1N4007 |
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MICRO COMMERCIAL COMPONENTS
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1N4007 |
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MOTOROLA
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1N4007 |
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YJ ELE-NIC CORP
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1N4007 |
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RECTIFIER
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1N4007 |
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EXTRA COM-NTS
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1N4007 |
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GALAXY ELECTRICAL
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1N4007 |
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GEMBIRD
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1N4007 |
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ТОМИЛИНО
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1N4007 |
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EXTRA
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1N4007 |
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КИТАЙ
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800
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4.54
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1N4007 |
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DIOTEC SEMICONDUCTOR
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1N4007 |
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MD
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1N4007 |
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218 525
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1.66
>100 шт. 0.83
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1N4007 |
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ONS-FAIR
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1N4007 |
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ONS
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1N4007 |
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ELZET
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1N4007 |
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GALAXY ME
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1N4007 |
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LGE
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33 651
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1.03
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1N4007 |
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HOTTECH
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428 971
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2.03
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1N4007 |
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KLS
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74 400
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2.07
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1N4007 |
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YS
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1N4007 |
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YANGJIE
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1 600
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1.55
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1N4007 |
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YANGJIE (YJ)
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1N4007 |
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MC
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1N4007 |
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FAIRCHILD
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1N4007 |
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WUXI XUYANG
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1N4007 |
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KUU
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1N4007 |
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CHINA
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14 461
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1.09
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1N4007 |
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SUNRISETRON
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1N4007 |
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UNKNOWN
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1N4007 |
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BILIN
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1N4007 |
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KEHE
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1N4007 |
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1
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1N4007 |
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BL
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1N4007 |
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SUNTAN
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74 064
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1.86
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1N4007 |
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TWGMC
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38 275
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1.38
>500 шт. 0.46
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1N4007 |
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CTK
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1N4007 |
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JUXING
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104
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1.91
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1N4007 |
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ASEMI
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11 440
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1.08
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1N4007 |
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YANGZHOU YANGJIE
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5 339
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3.63
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IRFP264 |
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Транзистор полевой N-MOS 250V, 38A, 280W
|
INTERNATIONAL RECTIFIER
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8
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317.52
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IRFP264 |
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Транзистор полевой N-MOS 250V, 38A, 280W
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VISHAY
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IRFP264 |
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Транзистор полевой N-MOS 250V, 38A, 280W
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IXYS
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IRFP264 |
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Транзистор полевой N-MOS 250V, 38A, 280W
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7
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491.40
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IRFP264 |
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Транзистор полевой N-MOS 250V, 38A, 280W
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IXYS CORPORATION
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IRFP264 |
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Транзистор полевой N-MOS 250V, 38A, 280W
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Vishay/Siliconix
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IRFP264 |
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Транзистор полевой N-MOS 250V, 38A, 280W
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КИТАЙ
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IRFP264 |
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Транзистор полевой N-MOS 250V, 38A, 280W
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VISHAY/IR
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IRFP264 |
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Транзистор полевой N-MOS 250V, 38A, 280W
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1
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IRG4PH50UD |
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Транзистор IGBT модуль единичный
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INTERNATIONAL RECTIFIER
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IRG4PH50UD |
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Транзистор IGBT модуль единичный
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660.00
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IRG4PH50UD |
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Транзистор IGBT модуль единичный
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МЕКСИКА
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IRG4PH50UD |
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Транзистор IGBT модуль единичный
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INFINEON
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IRG4PH50UD |
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Транзистор IGBT модуль единичный
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UNKNOWN
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69
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726.00
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LM358P |
|
Двухканальный операционный усилитель широкого применения
|
TEXAS INSTRUMENTS
|
|
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LM358P |
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Двухканальный операционный усилитель широкого применения
|
NATIONAL SEMICONDUCTOR
|
|
|
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LM358P |
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Двухканальный операционный усилитель широкого применения
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ST MICROELECTRONICS
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LM358P |
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Двухканальный операционный усилитель широкого применения
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16.80
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LM358P |
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Двухканальный операционный усилитель широкого применения
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TEXAS INSTRUMENTS
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LM358P |
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Двухканальный операционный усилитель широкого применения
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TEXAS INSTR
|
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LM358P |
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Двухканальный операционный усилитель широкого применения
|
TEXAS INSTRUMEN
|
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LM358P |
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Двухканальный операционный усилитель широкого применения
|
TEXAS
|
470
|
21.93
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LM358P |
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Двухканальный операционный усилитель широкого применения
|
4-7 НЕДЕЛЬ
|
67
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SPA20N60C3 |
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INFINEON
|
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SPA20N60C3 |
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INFINEON
|
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SPA20N60C3 |
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Infineon Technologies
|
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SPA20N60C3 |
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