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FET Type | MOSFET N-Channel, Metal Oxide |
Серия | TrenchMOS™ |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 70 mOhm @ 17A, 10V |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 35A |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) @ Vgs | 77nC @ 10V |
Input Capacitance (Ciss) @ Vds | 4570pF @ 25V |
Power - Max | 250W |
Тип монтажа | Выводной |
Корпус (размер) | TO-220-3 |
Корпус | TO-220AB |
PSMN070-200P (Мощные полевые МОП транзисторы) N-channel TrenchMOS transistor
Производитель:
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