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Версия для печати
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Серия | HEXFET® |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 42 mOhm @ 5.5A, 4.5V |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25° C | 5.5A |
| Vgs(th) (Max) @ Id | 600mV @ 250µA |
| Gate Charge (Qg) @ Vgs | 33nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 1820pF @ 10V |
| Power - Max | 1.7W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | Micro6™(TSOP-6) |
| Корпус | Micro6™(TSOP-6) |