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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | PowerTrench® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 23 mOhm @ 7.5A, 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 7.5A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 37nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 2015pF @ 25V |
| Power - Max | 2.5W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SOICN |
| Product Change Notification | Cu Wirebond Change 12/Oct/2007 Mold Compound Change 12/Dec/2007 |
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FDS3672 (MOSFET) N-Channel PowerTrench MOSFET
Производитель:
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| CRCW060330K1FKEA | VISHAY |
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| CRCW060330K1FKEA | Vishay/Dale |
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| CRCW060330K1FKEA | VISHAY |
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| CRCW060330K1FKEA |
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CRCW1218301RFKEK |
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Vishay/Dale |
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CRCW1218301RFKEK |
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| DS90LV049TMT/NOPB | MAXIM |
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| DS90LV049TMT/NOPB | NATIONAL SEMICONDUCTOR |
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| DS90LV049TMT/NOPB |
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228.00 | ||||||
| DS90LV049TMT/NOPB | TEXAS |
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| DS90LV049TMT/NOPB | NATIONAL SEMICONDUCTOR | 235 |
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| DS90LV049TMT/NOPB | 4-7 НЕДЕЛЬ | 240 |
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| GCM188R71H104KA57D | MURATA |
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| GCM188R71H104KA57D | MURATA | 10 240 |
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| GCM188R71H104KA57D |
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| GCM188R71H104KA57D | Murata Electronics North America |
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| GCM188R71H104KA57D | MUR | 143 627 |
1.38 >100 шт. 0.69 |
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IRFH9310TRPBF |
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International Rectifier |
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IRFH9310TRPBF |
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IRFH9310TRPBF |
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INFINEON |
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